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Diodes Inc. BC856A-7-F

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1 mm
Length
3.05 mm
Width
1.4 mm

Physical

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Case/Package
SOT-23
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
7.994566 mg

Technical

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Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
65 V
Collector Emitter Saturation Voltage
-650 mV
Collector Emitter Voltage (VCEO)
65 V
Current Rating
-100 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
200 MHz
Gain Bandwidth Product
200 MHz
Max Breakdown Voltage
65 V
Max Collector Current
100 mA
Max Frequency
200 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
300 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Cut Tape
Polarity
PNP
Power Dissipation
350 mW
Transition Frequency
200 MHz
Voltage Rating (DC)
-65 V

Compliance Documents

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