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Home Products Discrete Semiconductors Transistors BJTs BC847BS-7-F

Diodes Inc. BC847BS-7-F

Bipolar Transistor Array, Dual, NPN, 45 V, 100 mA, 200 mW, 200 hFE, SOT-363
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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.1 mm
Length
2.2 mm
Width
1.35 mm

Physical

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Case/Package
SOT-363
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Weight
6.010099 mg

Technical

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Collector Base Voltage (VCBO)
50 V
Collector Emitter Breakdown Voltage
45 V
Collector Emitter Saturation Voltage
100 mV
Collector Emitter Voltage (VCEO)
45 V
Current
1 A
Element Configuration
Dual
Emitter Base Voltage (VEBO)
6 V
Frequency
100 MHz
Gain Bandwidth Product
100 MHz
hFE Min
200
Max Breakdown Voltage
60 V
Max Collector Current
100 mA
Max Frequency
100 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
200 mW
Min Operating Temperature
-65 °C
Number of Elements
2
Packaging
Cut Tape
Polarity
NPN
Power Dissipation
200 mW
Transition Frequency
100 MHz
Voltage
45 V

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