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Diodes Inc. 2DB1694-7

DIODES INC. 2DB1694-7 Bipolar (BJT) Single Transistor, PNP, 30 V, 300 MHz, 300 mW, 500 mA, 270 hFE

Product Details

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Compliance

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Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1 mm
Length
2.15 mm
Width
1.3 mm

Physical

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Case/Package
SOT-323
Mount
Surface Mount
Number of Pins
3
Weight
6.010099 mg

Technical

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Collector Base Voltage (VCBO)
30 V
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Saturation Voltage
-380 mV
Collector Emitter Voltage (VCEO)
30 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
-6 V
Frequency
300 MHz
Gain Bandwidth Product
300 MHz
hFE Min
270
Max Breakdown Voltage
30 V
Max Collector Current
1 A
Max Frequency
300 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
500 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Cut Tape
Polarity
PNP
Power Dissipation
500 mW
Termination
SMD/SMT
Transition Frequency
IBS

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