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Central Semiconductor 2N2905A

Bulk Through Hole Single 3 Bipolar (BJT) Transistor 450mA 600mW 200MHz 180ns

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
Compliant

Physical

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Case/Package
TO-39
Mount
Through Hole

Technical

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related specs
Collector Base Voltage (VCBO)
60 V
Collector Emitter Breakdown Voltage
60 V
Collector Emitter Saturation Voltage
1.6 V
Collector Emitter Voltage (VCEO)
1.6 V
Continuous Collector Current
450 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Gain Bandwidth Product
200 MHz
hFE Min
75
Max Collector Current
600 mA
Max Operating Temperature
150 °C
Max Power Dissipation
600 mW
Min Operating Temperature
-65 °C
Packaging
Bulk
Polarity
PNP
Transition Frequency
200 MHz

Compliance Documents

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