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Central Semiconductor 2N2219A

Transistor GP BJT NPN 40V 800mA 3-Pin TO-39 Box

Product Details

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Compliance

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RoHS
Compliant

Physical

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Case/Package
TO-39
Mount
Through Hole

Technical

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Collector Base Voltage (VCBO)
75 V
Collector Emitter Breakdown Voltage
40 V
Collector Emitter Saturation Voltage
1 V
Collector Emitter Voltage (VCEO)
1 V
Continuous Collector Current
450 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Gain Bandwidth Product
300 MHz
hFE Min
35
Max Collector Current
800 mA
Max Operating Temperature
150 °C
Max Power Dissipation
800 mW
Min Operating Temperature
-65 °C
Polarity
NPN
Transition Frequency
300 MHz

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