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CEL NE5550979A-T1-A

RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Radiation Hardening
No
RoHS
Compliant

Physical

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Case/Package
A
Mount
-55 °C
Number of Pins
4

Technical

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Continuous Drain Current (ID)
3:00 AM
Current Rating
3 A
Frequency
3 A
Gain
22 dB
Gate to Source Voltage (Vgs)
6 V
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape & Reel (TR)
Test Current
200 mA
Test Voltage
7.5 V
Voltage Rating
30 V

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