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CEL NE3210S01-T1B

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
Compliant

Physical

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Case/Package
SMD/SMT
Mount
Surface Mount
Number of Pins
1

Technical

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Continuous Drain Current (ID)
70 mA
Current Rating
15 mA
Drain to Source Breakdown Voltage
4 V
Drain to Source Voltage (Vdss)
4 V
Frequency
12 GHz
Gain
13.5 dB
Gate to Source Voltage (Vgs)
-3 V
Max Operating Temperature
125 °C
Max Power Dissipation
165 mW
Min Operating Temperature
-65 °C
Noise Figure
0.35 dB
Packaging
Tape and Reel
Power Dissipation
165 mW
Test Current
10 mA
Test Voltage
2 V
Voltage Rating
4 V

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