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Alpha & Omega Semiconductor AOTF12N65

Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Lead Free
Contains Lead
RoHS
Compliant

Physical

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Case/Package
TO-220-3
Mount
Through Hole
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
12 A
Drain to Source Voltage (Vdss)
650 V
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
2.15 nF
Max Operating Temperature
150 °C
Max Power Dissipation
50 W
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
50 W
Rds On Max
720 mΩ

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