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Alpha & Omega Semiconductor AONR21307

Power Field-Effect Transistor, 24A I(D), 30V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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Dimensions

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Height
900 µm

Supply Chain

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Lifecycle Status
900 µm

Technical

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Continuous Drain Current (ID)
-24 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
9.2 mΩ
Drain to Source Voltage (Vdss)
9.2 mΩ
Gate to Source Voltage (Vgs)
25 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
150 °C
Number of Channels
-55 °C
Power Dissipation
5 W
Turn-Off Delay Time
43.5 ns
Turn-On Delay Time
11 ns

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