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Alpha & Omega Semiconductor AON6512

Power Field-Effect Transistor, 32A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
Compliant

Physical

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Case/Package
DFN EP
Mount
-55 °C
Number of Pins
8

Supply Chain

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Lifecycle Status
NRND

Technical

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Continuous Drain Current (ID)
150 A
Drain to Source Voltage (Vdss)
30 V
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
3.43 nF
Manufacturer Package Identifier
DFN5x6_8L_EP1_P
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
7.4 W
Number of Elements
1
Packaging
Tape & Reel (TR)
Power Dissipation
83 W
Rds On Max
1.7 mΩ

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