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Alpha & Omega Semiconductor AON6280

Power Field-Effect Transistor, 85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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RoHS
Compliant

Dimensions

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Height
1 mm

Physical

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Case/Package
DFN
Mount
-55 °C
Number of Pins
8

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
17 A
Drain to Source Breakdown Voltage
80 V
Drain to Source Resistance
3.4 mΩ
Drain to Source Voltage (Vdss)
3.4 mΩ
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
3.93 nF
Manufacturer Package Identifier
150 °C
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
7.3 W
Number of Channels
1
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
7.3 W
Rds On Max
4.1 mΩ
Turn-Off Delay Time
4.1 mΩ
Turn-On Delay Time
13 ns

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